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| SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4 - FEBRUARY 1998 FEATURES * * * * * * VCEO = 40V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50m at 5A FZT1051A C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 150 40 5 10 5 500 2.5 -55 to +150 UNIT V V V A A mA W C The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches. FZT1051A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL MIN. V(BR)CBO 150 TYP. 190 MAX. UNIT V CONDITIONS. IC=100A VCES 150 190 V IC=100A * IC=10mA VCEO 40 60 V VCEV 150 190 V IC=100A, VEB=1V Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO IEBO ICES 5 9 V IE=100A 0.3 0.3 0.3 10 10 10 nA nA nA VCB=120V VEB=4V VCES=120V VCE(sat) 17 85 140 250 980 25 120 180 340 1100 mV mV mV mV mV IC=0.2A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB= 20mA* IC=5A, IB=100mA* IC=5A, IB=100mA* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) 915 1000 mV IC=5A, VCE=2V* hFE 290 270 130 40 440 450 220 55 155 1200 IC=10mA, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* MHz IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=3A, IB=30mA, VCC=10V Transition Frequency fT Output Capacitance Turn-on Time Turn-off Time Cobo ton toff 27 220 540 40 pF ns ns *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FZT1051A TYPICAL CHARACTERISTICS 1.0 +25C 1.0 IC/IB=100 0.8 0.8 VCE(sat) - (V) VCE(sat) - (V) 0.6 0.4 0.2 0 1m 10m IC/IB=50 IC/IB=100 IC/IB=200 0.6 0.4 0.2 0 -55C +25C +100C +150C 100m 1 10 100 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 750 VCE=2V +100C +25C -55C 1.2 IC/IB=100 hFE - Typical Gain 0.9 500 VBE(sat) - (V) 0.6 -55C +25C +100C +150C 250 0.3 0 1m 10m 100m 1 10 100 0 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.6 100 1.2 IC - Collector Current (A) VCE=2V VBE(on) - (V) 10 0.8 0.4 -55C +25C +100C +150C 1 DC 1s 100ms 10ms 1ms 100us 0 1m 10m 100m 1 10 100 100m 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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